2N5551G - ON Semiconductor View larger

2N5551G - ON Semiconductor

ON Semiconductor

2N5551G


Transistors Bipolar - BJT 600mA 180V NPN

$ 0.74

7789 7789 Items In Stock

Specification of 2N5551G

Maximum Operating Temperature + 150 C
Brand ON Semiconductor
Product Category Transistors Bipolar - BJT
DC Collector/Base Gain hFE Min 80
Manufacturer Part No. 2N5551G
Collector-Emitter Saturation Voltage 0.25 V
Collector- Emitter Voltage VCEO Max 160 V
Transistor Polarity NPN
Continuous Collector Current 0.6 A
Package/Case TO-92-3 (TO-226)
Minimum Operating Temperature - 55 C
Packaging Bulk
Mounting Style Through Hole
Configuration Single
Alternate Part No. 863-2N5551G
Emitter- Base Voltage VEBO 6 V
Maximum Power Dissipation 625 mW
Gain Bandwidth Product fT 300 MHz
Collector- Base Voltage VCBO 180 V
Maximum DC Collector Current 0.6 A
Series 2N5551
Manufacturer ON Semiconductor