2N6109G - ON Semiconductor View larger

2N6109G - ON Semiconductor

ON Semiconductor

2N6109G


Transistors Bipolar - BJT 7A 50V 40W PNP

$ 1.63

1411 1411 Items In Stock

Specification of 2N6109G

Transistor Polarity PNP
Gain Bandwidth Product fT 10 MHz
Collector- Emitter Voltage VCEO Max 50 V
Alternate Part No. 863-2N6109G
Package/Case TO-220-3
DC Collector/Base Gain hFE Min 30
Maximum Operating Temperature + 150 C
Mounting Style Through Hole
Minimum Operating Temperature - 65 C
Brand ON Semiconductor
Series 2N6109
Collector-Emitter Saturation Voltage 3.5 V
Packaging Tube
Emitter- Base Voltage VEBO 5 V
Continuous Collector Current 7 A
Configuration Single
Product Category Transistors Bipolar - BJT
Maximum Power Dissipation 40 W
Collector- Base Voltage VCBO 60 V
Manufacturer ON Semiconductor
Manufacturer Part No. 2N6109G
Maximum DC Collector Current 7 A