2SA2016-TD-E - ON Semiconductor View larger

2SA2016-TD-E - ON Semiconductor

ON Semiconductor

2SA2016-TD-E


Transistors Bipolar - BJT BIP PNP 7A 50V

$ 1.29

1129 1129 Items In Stock

Specification of 2SA2016-TD-E

Collector- Emitter Voltage VCEO Max 50 V
Transistor Polarity PNP
Alternate Part No. 863-2SA2016-TD-E
Emitter- Base Voltage VEBO 6 V
Manufacturer ON Semiconductor
Manufacturer Part No. 2SA2016-TD-E
DC Collector/Base Gain hFE Min 200
Product Category Transistors Bipolar - BJT
Mounting Style SMD/SMT
Package/Case SOT-89-3
Continuous Collector Current 7 A
Maximum DC Collector Current 7 A
Gain Bandwidth Product fT 330 MHz
Packaging Reel
Collector-Emitter Saturation Voltage 240 mV
Brand ON Semiconductor
Series 2SA2016
Maximum Power Dissipation 3.5 W
Collector- Base Voltage VCBO 100 V