2SB1123T-TD-E - ON Semiconductor View larger

2SB1123T-TD-E - ON Semiconductor

ON Semiconductor

2SB1123T-TD-E


Transistors Bipolar - BJT BIP PNP 2A 50V

$ 0.85

434 434 Items In Stock

Specification of 2SB1123T-TD-E

DC Current Gain hFE Max 560
Collector- Emitter Voltage VCEO Max - 50 V
Configuration Single
Maximum DC Collector Current - 4 A
Series 2SB1123
Manufacturer Part No. 2SB1123T-TD-E
DC Collector/Base Gain hFE Min 100
Brand ON Semiconductor
Product Category Transistors Bipolar - BJT
Continuous Collector Current - 2 A
Maximum Operating Temperature + 150 C
Gain Bandwidth Product fT 150 MHz
Mounting Style SMD/SMT
Alternate Part No. 863-2SB1123T-TD-E
Maximum Power Dissipation 0.5 W
Emitter- Base Voltage VEBO - 6 V
Transistor Polarity PNP
Collector-Emitter Saturation Voltage - 0.3 V
Collector- Base Voltage VCBO - 60 V
Minimum Operating Temperature - 55 C
Packaging Reel
Manufacturer ON Semiconductor